Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2015-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e997d7c81d686f32fd04b8ec992042eb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a5f69c3f59b08f18c724a24f7736558 |
publicationDate |
2015-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015357411-A1 |
titleOfInvention |
P-fet with strained silicon-germanium channel |
abstract |
A method of forming a semiconductor structure includes forming a dummy gate above a semiconductor substrate. The dummy gate defines a source-drain region adjacent to the dummy gate and a channel region below the dummy gate. A silicon-germanium layer is epitaxially grown above the source-drain region with a target concentration of germanium atoms. The semiconductor structure is annealed to diffuse the germanium atoms from the silicon-germanium layer into the channel region to form a silicon-germanium channel region. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11515308-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9614087-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102020116555-B3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102020008016-B4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102020008016-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10109709-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9590037-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020098897-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079181-B2 |
priorityDate |
2014-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |