abstract |
A gate structure is provided on a channel portion of a semiconductor substrate. The gate structure may include an electrically conducting layer present on a gate dielectric layer, a semiconductor-containing layer present on the electrically conducting layer, a metal semiconductor alloy layer present on the semiconductor-containing layer, and a dielectric capping layer overlaying the metal semiconductor alloy layer. In some embodiments, carbon and/or nitrogen can be present within the semiconductor-containing layer, the metal semiconductor alloy layer or both the semiconductor-containing layer and the metal semiconductor alloy layer. The presence of carbon and/or nitrogen within the semiconductor-containing layer and/or the metal semiconductor alloy layer provides stability to the gate structure. In another embodiment, a layer of carbon and/or nitrogen can be formed between the semiconductor-containing layer and the metal semiconductor alloy layer. |