| abstract |
A semiconductor device includes a semiconductor substrate, a gate electrode structure including a gate electrode located on an active region of the semiconductor substrate, first and second epitaxial regions located in the active region at opposite sides of the gate electrode structure, and first and second silicide layers on upper surfaces of the first and second epitaxial regions, respectively. The first and second epitaxial regions include Si—X, where X is one of germanium and carbon, and at least a portion of each of the first and second silicide layers is devoid of X and includes Si—Y, where Y is a metal or metal alloy |