| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8ddf0a06e18e72bd7d0d0379d3777886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_816ac6328366d4ab552cc3ed86bbdf29 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2012-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2589e4d8cc0f81bdb7b8f24d2185376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7553e7387f33b294758b6e7f65694161 |
| publicationDate |
2015-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9012310-B2 |
| titleOfInvention |
Epitaxial formation of source and drain regions |
| abstract |
Mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) are provided. The mechanisms eliminate dislocations near gate corners and gate corner defects (GCDs), and maintain transistor performance. The mechanisms described involve using a post-deposition etch to remove residual dislocations near gate corners after a cyclic deposition and etching (CDE) process is used to fill a portion of the recess regions with an epitaxially grown silicon-containing material. The mechanisms described also minimize the growth of dislocations near gate corners during the CDE process. The remaining recess regions may be filled by another silicon-containing layer deposited by an epitaxial process without forming dislocations near gate corners. The embodiments described enable gate corners to be free of dislocation defects, preserve the device performance from degradation, and widen the process window of forming S/D regions without gate corner defects and chamber matching issues. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11251313-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11688813-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11367620-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I713771-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019157425-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10796919-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017110327-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879354-B2 |
| priorityDate |
2012-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |