| abstract |
A method for forming a semiconductor structure includes following operations. Gate structures are arranged above a first active region, a second active region and a non-active region of a substrate of a semiconductor structure. The first and second active regions are spaced apart by the non-active region. Contacts are arranged above the first and second active regions. At least one gate via is arranged above the first active region or the second active region. The at least one gate via is electrically coupled with the gate structures. At least one local interconnect is selectively arranged over the non-active region, to couple at least one of the contacts above the first active region to at least one of the contacts above the second active region. |