| abstract |
A semiconductor device (101) includes a substrate (10) and, in a plan view, an isolation structure (IS), a first gate structure (GS1), a second gate structure (GS2), a first slot contact structure (SC1), a first gate contact structure (GC1), and a second gate contact structure (GC2). The substrate includes a first active region (A1) and a second active region (A2) elongated in a first direction (D1) respectively. The first gate structure, the second gate structure, and the first slot contact structure are elongated in a second direction (D2) respectively. The first gate contact structure and the second gate contact structure are disposed at two opposite sides of the first slot contact structure in the first direction respectively and disposed between the first active region and the second active region in the second direction. A length of the first gate contact structure and a length of the second gate contact structure in the second direction are less than a length of the isolation structure in the second direction. |