| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68771
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2015-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b13b15ae666bc4df8241b6a26b7c4a8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21fcfbcd1ed8fa4fd394538f5a3cd79e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e4a2d06118bcebab55fa0b03a477e64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c633fbac8e82f01a241d2d66facd674 |
| publicationDate |
2016-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016064246-A1 |
| titleOfInvention |
Substrate processing apparatus and method of processing a substrate |
| abstract |
A method of processing a substrate is provided. A substrate is placed on a turntable provided in a process chamber. The process chamber includes a process area for supplying an etching gas and a purge area for supplying a purge gas. The process area and the purge area are arranged along a rotational direction of the turntable and divided from each other. The etching gas is supplied into the process area. The purge gas is supplied into the purge area. The turntable rotates to cause the substrate placed on the turntable to pass through the process area and the purge area once per revolution, respectively. A film deposited on a surface of the substrate is etched when the substrate passes the process are. An etching rate of the etching or a surface roughness of the film is controlled by changing a rotational speed of the turntable. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017335453-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017009345-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11274372-B2 |
| priorityDate |
2014-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |