Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-10 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
2014-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cd381fa77919098ff0e1a380fa61d41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd7f10348ed248ff8bfeb657227ff990 |
publicationDate |
2015-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015255529-A1 |
titleOfInvention |
Silicon process compatible trench magnetic device |
abstract |
A mechanism is provided for integrating an inductor into a semiconductor. A circular or other closed loop trench is formed in a substrate with sidewalls connected by a bottom surface in the substrate. A first insulator layer is deposited on the sidewalls of the trench so as to coat the sidewalls and the bottom surface. A conductor layer is deposited on the sidewalls and the bottom surface of the trench so as to coat the first insulator layer in the trench such that the conductor layer is on top of the first insulator layer in the trench. A first magnetic layer is deposited on the sidewalls and bottom surface of the trench so as to coat the first insulator layer in the trench without filling the trench. The first magnetic layer deposited on the sidewalls forms an inner closed magnetic loop and an outer closed magnetic loop within the trench. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152144-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11696407-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019157152-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031288-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111200062-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023035432-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043607-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022117089-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9761509-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9978666-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110277348-A |
priorityDate |
2014-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |