| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-81139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-8114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-10135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-10165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0361
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-81 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-001 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-053 |
| filingDate |
2015-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5573aa3a2480135e204d64d392767ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7adb83c03c9adb826ff5b9e0a5b7f6b5 |
| publicationDate |
2015-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015130044-A1 |
| titleOfInvention |
Novel mechanism for mems bump side wall angle improvement |
| abstract |
The present disclosure relates to a bump processing method and/or resulting MEMS-CMOS structure, in which one or more anti-stiction bumps are formed within a substrate prior to the formation of a cavity in which the one or more anti-stiction bumps reside. By forming the one or more anti-stiction bumps prior to a cavity, the sidewall angle and the top critical dimension (i.e., surface area) of the one or more anti-stiction bumps are reduced. The reduction in sidewall angle and critical dimension reduces stiction between a substrate and a moveable part of a MEMS device. By reducing the size of the anti-stiction bumps through a processing sequence change, lithographic problems such as reduction of the lithographic processing window and bump photoresist collapse are avoided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I709524-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10562763-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11261083-B2 |
| priorityDate |
2011-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |