abstract |
A method for forming an oxide film by plasma-assisted processing includes: (i) supplying a precursor reactive to none of oxygen, C x O y , and N x O y (x and y are integers) without a plasma to a reaction space wherein a substrate is placed; (ii) exposing the precursor to a plasma of C x O y and/or N x O y in the reaction space; and (iii) forming an oxide film on the substrate using the precursor and the plasma. |