| abstract |
Provided are carbon doped resistive switching layers, resistive random access memory (ReRAM) cells including these layers, as well as methods of forming thereof. Carbon doping of metal containing materials creates defects in these materials that allow forming and breaking conductive paths as evidenced by resistive switching. Relative to many conventional dopants, carbon has a lower diffusivity in many suitable base materials. As such, these carbon doped materials exhibit structural stability and consistent resistive switching over many operating cycles. Resistive switching layers may include as much as 30 atomic percent of carbon, making the dopant control relatively simple and flexible. Furthermore, carbon doping has acceptor characteristics resulting in a high resistivity and low switching currents, which are very desirable for ReRAM applications. Carbon doped metal containing layer may be formed from metalorganic precursors at temperatures below saturation ranges of atomic layer deposition. |