| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2012-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4b7721469d62072266029573bb576d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1deecfaff13a0ae05489abc32b33f140
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3e326663fa410238e2b9c4ea6712fb3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_403c8e56bb15c2f97173b9169acef142 |
| publicationDate |
2013-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013095668-A1 |
| titleOfInvention |
Semiconductor device manufacturing method and substrate processing apparatus |
| abstract |
Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910217-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I709163-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I699907-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113430501-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9368358-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10707074-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018286662-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11348794-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10519543-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017218507-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016056044-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10508333-B2 |
| priorityDate |
2010-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |