| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242789508fcc9b52c84a82ac211a6774 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-0059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-00756 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2013-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1688ee7f1fab609eae5ccb6df7f1b3ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_984272a5c63b5a4b1bb74e1c81841a20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d57979182f3d1f13ed348e72bd7a2e8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce23cceccfa7af80cc5420483bd0aad0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c37bec92c2c5b799e5fd5b04eb54c4c1 |
| publicationDate |
2013-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013313566-A1 |
| titleOfInvention |
GaN Epitaxy With Migration Enhancement and Surface Energy Modification |
| abstract |
Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014127887-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014124788-A1 |
| priorityDate |
2011-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |