| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02499
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2010-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a253e4777d638c1d1dc2548035714236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f5981b3dc7891bf02c4f1830ccdbc1a |
| publicationDate |
2011-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011027974-A1 |
| titleOfInvention |
Indium surfactant assisted hvpe of high quality gallium nitride and gallium nitride alloy films |
| abstract |
One embodiment of depositing a gallium nitride (GaN) film on a substrate comprises providing a source of indium (In) and gallium (Ga) and depositing a monolayer of indium (In) on the surface of the gallium nitride (GaN) film. The monolayer of indium (In) acts as a surfactant to modify the surface energy and facilitate the epitaxial growth of the film by suppressing three dimensional growth and enhancing or facilitating two dimensional growth. The deposition temperature is kept sufficiently high to enable the indium (In) to undergo absorption and desorption on the gallium nitride (GaN) film without being incorporated into the solid phase gallium nitride (GaN) film. The gallium (Ga) and indium (In) can be provided by a single source or separate sources. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015235941-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020392645-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111293037-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015050753-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011136280-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490208-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022205133-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013313566-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9443728-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8318515-B2 |
| priorityDate |
2009-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |