| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2012-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_852281bb50bd1c96ed62a3e651f63bd5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db47a1d6e1a4e4d7a401d984dffeafc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3009944ec7aeb674ef0522d45de9985 |
| publicationDate |
2013-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013256684-A1 |
| titleOfInvention |
Compound semiconductor device and method of manufacturing the same |
| abstract |
An embodiment of a compound semiconductor device includes: a substrate; an electron transport layer formed over the substrate; an electron supply layer formed over the electron transport layer; a source electrode and a drain electrode formed over the electron supply layer; a gate electrode formed over the electron supply layer between the source electrode and the drain electrode; a p-type compound semiconductor layer formed between the electron supply layer and the gate electrode; and a compound semiconductor layer containing an n-type impurity formed between the electron supply layer and the p-type compound semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11538922-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/IT-201800001693-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9806158-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11757005-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023282846-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022271083-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11038025-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10991803-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015034958-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9570597-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10896969-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9577084-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3514835-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018248009-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9978844-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014042449-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9865714-B2 |
| priorityDate |
2012-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |