http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022271083-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1ad4b1469343bcb8a828abe4c24c33b2 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate | 2021-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_473137fbe809d3e89e523bfd16119102 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1e262fb3395daacb3723a787c1998e1 |
publicationDate | 2022-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | WO-2022271083-A1 |
titleOfInvention | Semiconductor apparatus and method for fabricating thereof |
abstract | 5The present invention relates to a semiconductor apparatus (2000) and a method for fabricating the semiconductor apparatus (2000). The method includes forming a first dielectric film (114) on at least one portion of a GaN cap (120). The first dielectric film (106) is patterned with a photo resist (118), after an isolation region (108) is formed. The method includes depositing the highly doped p type layer on the portion of the first dielectric film (114) and a portion of a channel depletion zone (112), after the gate region of the dielectric film (114) is etched away in the semiconductor apparatus (2000). The highly doped p type layer (122) is patterned with the photo resist (118), wherein the highly doped p type layer (122) and the first dielectric film (114) are covered with the second dielectric film (116). |
priorityDate | 2021-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.