http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022271083-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1ad4b1469343bcb8a828abe4c24c33b2
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
filingDate 2021-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_473137fbe809d3e89e523bfd16119102
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1e262fb3395daacb3723a787c1998e1
publicationDate 2022-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2022271083-A1
titleOfInvention Semiconductor apparatus and method for fabricating thereof
abstract 5The present invention relates to a semiconductor apparatus (2000) and a method for fabricating the semiconductor apparatus (2000). The method includes forming a first dielectric film (114) on at least one portion of a GaN cap (120). The first dielectric film (106) is patterned with a photo resist (118), after an isolation region (108) is formed. The method includes depositing the highly doped p type layer on the portion of the first dielectric film (114) and a portion of a channel depletion zone (112), after the gate region of the dielectric film (114) is etched away in the semiconductor apparatus (2000). The highly doped p type layer (122) is patterned with the photo resist (118), wherein the highly doped p type layer (122) and the first dielectric film (114) are covered with the second dielectric film (116).
priorityDate 2021-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014239306-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170069479-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804
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http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559169
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268

Total number of triples: 23.