| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa0ed780cd77fd903ff9c2290876c8c7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2010-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_275c395bdfecf092fa29810266af9daf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9120596bc8860d19cf0128067d99d54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1821baa603650f8afb7f5fb68df958b2 |
| publicationDate |
2011-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2011059617-A1 |
| titleOfInvention |
High aspect ratio silicon oxide etch |
| abstract |
Methods of etching high-aspect-ratio features in dielectric materials such as silicon oxide are described. The methods may include a concurrent introduction of a fluorocarbon precursor and an iodo-fluorocarbon precursor into a substrate processing system housing a substrate. The fluorocarbon precursor may have a F:C atomic ratio of about 2:1 or less, and the iodo-fluorocarbon may have a F:C ratio of about 1.75:1 to about 1.5:1. Exemplary precursors may include C 4 F 6 , C 5 F 8 and C 2 F 3 I, among others. The substrate processing system may be configured to allow creation of a plasma useful for accelerating ions created in the plasma toward the substrate. The substrate may have regions of exposed silicon oxide and an overlying patterned photoresist layer which exposes narrow regions of silicon oxide. The etch process may remove the silicon oxide to a significant depth while maintaining a relatively constant width down the trench. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023193460-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110828308-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020515047-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020051827-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8623148-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110178206-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017178923-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10276439-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018126206-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3563406-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011056515-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022146697-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021407817-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11367622-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11430663-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10607850-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10804113-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7227135-B2 |
| priorityDate |
2009-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |