| abstract |
The invention concerns the use of the ruthenium containing precursor having the formula (R n -chd) Ru(CO) 3 , wherein:ā (R n -chd) represents a cyclohexadiene (chd) ligand substituted with n substituents R, any R being in any position on the chd ligand;ā n is an integer comprised between 1 and 8 (1ā¦nā¦8) and represents the number of substituents on the chd ligand; R is selected from the group consisting of C1-C4 linear or branched alkyls, alkylamides, alkoxides, alkylsilylamides, amidinates, carbonyl and/or fluoroalkyl for R being located in any of the eight available position on the chd ligand, while R can also be oxygen O for substitution on the C positions in the chd cycle which are not involved in a double bond for the deposition of a Ru containing film on a substrate. |