| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7ef01e33058cf740cf2197991be97af1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc3e639586089fe232d0cfb27383c875 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-74 |
| filingDate |
2010-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1759cae373b441411fc9c0c83cf93b64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ad1c397e0996b5d8162b832cb68165f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e4027377d0700aa425099a7bb935b70 |
| publicationDate |
2010-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010200990-A1 |
| titleOfInvention |
Manufacturing method of semiconductor device and semiconductor device produced therewith |
| abstract |
A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. n A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8288295-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009029558-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8012880-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008122101-A1 |
| priorityDate |
2004-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |