| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_952b79b0b1d3958dfab8db1254ede31c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-88 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 |
| filingDate |
2008-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3745c798cc5d1cf3cba7693035cfea1c |
| publicationDate |
2010-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010025666-A1 |
| titleOfInvention |
Organic thin film transistor and organic thin film transistor manufacturing process |
| abstract |
Disclosed is a stable organic thin film transistor having good switching property and a process for manufacturing an organic thin film transistor by a simple method. The organic thin film transistor comprises a substrate and provided thereon, at least a source electrode, a drain electrode, an organic semiconductor connecting the source electrode and the drain electrode, a gate electrode, and an insulating layer composed of a plurality of layers, the insulating layer being provided between the gate electrode and the organic semiconductor, wherein the organic thin film transistor comprises a mercapto group-containing compound represented by the following formula (I), n Formula (I) n (R) n —Si(A) 3-n —(B) n wherein R represents an alkyl group having a carbon atom number of not more than 8; A represents an alkoxy group or a halogen atom; B represents a substituent containing an SH group; and n is an integer of from 0 to 2. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8604482-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10581026-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9627445-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102376893-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104701344-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019157623-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012032174-A1 |
| priorityDate |
2007-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |