| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2c78d80e9d323ad7c79518c80e0b8d16 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2008-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b84e03322a8fef51d8328c73666c5578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_661f23bb0528d3d6b9cef78b9418951c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3017021c656f15a351a3493602cfd20a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f3c1e5334d0e57b773a84be8662025b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e12e897f5e3404a72a6f6ef2ff2ce22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67bbe184b92506bf544e5fc50fcc9134 |
| publicationDate |
2009-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009239374-A1 |
| titleOfInvention |
Methods of Forming Metal Interconnect Structures on Semiconductor Substrates Using Oxygen-Removing Plasmas and Interconnect Structures Formed Thereby |
| abstract |
Methods of forming devices include forming a first electrically insulating layer having a metal interconnection therein, on a substrate and then forming a first electrically insulating barrier layer on an upper surface of the metal interconnection and on the first electrically insulating layer. The first electrically insulating barrier layer is exposed to a plasma that penetrates the first electrically insulating barrier and removes oxygen from an upper surface of the metal interconnection. The barrier layer may have a thickness in a range from about 5 Å to about 50 Å and the plasma may be a hydrogen-containing plasma that converts oxygen on the upper surface of the metal interconnection to water. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3809451-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017126802-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3067920-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9613826-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7755192-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009243112-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022186941-A1 |
| priorityDate |
2008-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |