http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017126802-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate | 2017-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecf3b42ddaf4a58d426d716bd048da08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08eaa0e6df9c47e6dc46f179d4a125ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d8df76981828f445274c29ec4665d5c |
| publicationDate | 2017-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2017126802-A |
| titleOfInvention | Semiconductor device |
| abstract | To improve the TDDB life of a semiconductor device having a Cu wiring. A semiconductor device includes an interlayer insulating film INS2, an adjacent Cu wiring M1W formed in the interlayer insulating film INS2, a surface of the interlayer insulating film INS2 and a surface of the Cu wiring M1W, and an interlayer insulating film INS2. And an insulating barrier film BR1 covering the Cu wiring M1W. Between the adjacent Cu wirings M1W, the interlayer insulating film INS2 has a damaged layer DM1 on the surface thereof, and an electric field relaxation layer ER1 having a nitrogen concentration higher than the nitrogen concentration of the damaged layer DM1 at a deeper position than the damaged layer DM1. Have [Selection] Figure 6 |
| priorityDate | 2017-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.