| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81cfb88d909c75104c0c8d61799a72b0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F11-141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F11-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F3-06 |
| filingDate |
2008-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfe03a7e12785a86a03e6f0b27094c98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_408c5c237358db939f26cc511c4b1005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c8b977c5c53cfc5fdf2e10943e96f88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d10428ed5c9862246c9155ab035dc53b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cda51c84773b96f6f35ea45f9d4c1a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19ab3a0f5edd68ba5f9772bdf8d463da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2332634826cc198b576aa705aeddc30e |
| publicationDate |
2009-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009137122-A1 |
| titleOfInvention |
Method of passivating chemical mechanical polishing compositions for copper film planarization processes |
| abstract |
A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103789770-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10392531-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8790160-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8309468-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012276819-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012276742-A1 |
| priorityDate |
2002-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |