| abstract |
In certain embodiments methods for depositing materials on substrates, and more particularly, methods for depositing dielectric layers, such as silicon oxides or silicon oxynitrides, on germanium substrates are provided. The methods involve depositing a barrier layer on the germanium substrate to prevent oxidation of the germanium substrate when forming a dielectric layer on the germanium substrate. In certain embodiments, a silicon layer is deposited on the germanium substrate to form a barrier layer. In certain embodiments, nitridation of the germanium substrate forms a Ge x N y layer which functions as a barrier layer. In certain embodiments, a silicon nitride layer is deposited on the germanium substrate to form a barrier layer. |