| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P80-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4991
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2007-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39cbe1b35aced2ea1f85bc30f7483c94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba90cea6627f68c786dcebdd22e4c507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3417f48f7e64235571cb9b4c1574fdc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7818dab44798291d5a7612bca28601a |
| publicationDate |
2008-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2008254579-A1 |
| titleOfInvention |
Semiconductor device and fabrication thereof |
| abstract |
A method for forming a semiconductor device is disclosed. A substrate including a gate dielectric layer and a gate electrode layer sequentially formed thereon is provided. An offset spacer is formed on sidewalls of the gate dielectric layer and the gate electrode layer. A carbon spacer is formed on a sidewall of the offset spacer, and the carbon spacer is then removed. The substrate is implanted to form a lightly doped region using the gate electrode layer and the offset spacer as a mask. The method may also include providing a substrate having a gate dielectric layer and a gate electrode layer sequentially formed thereon. A liner layer is formed on sidewalls of the gate electrode layer and on the substrate. A carbon spacer is formed on a portion of the liner layer adjacent the sidewall of the gate electrode layer. A main spacer is formed on a sidewall of the carbon spacer. The carbon spacer is removed to form an opening between the liner layer and the main spacer. The opening is sealed by a sealing layer to form an air gap. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109390402-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017512383-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102009055393-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110729233-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140112773-A |
| priorityDate |
2007-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |