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publicationDate 2018-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2018138280-A1
titleOfInvention Semiconductor device and forming method thereof
abstract A semiconductor device includes a semiconductor substrate, at least one gate stack, a gate spacer and a dielectric cap. The gate stack is located on the semiconductor substrate. The gate spacer is located on a sidewall of the gate stack. The gate spacer includes a first dielectric layer and a second dielectric layer with different etch properties. The dielectric cap at least caps the gate spacer. The dielectric cap and the second dielectric layer define a gap therebetween.
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