| abstract |
A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of In x Ga (1-x) N (0.01≦x≦0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of In y Ga (1-y) N (0≦y≦0.01) on the first barrier layer, and doped with an anti-defect agent including at least one of an N (nitrogen) element and a Si (silicon) element, a quantum well layer formed of In z Ga (1-z) N (0.25≦z≦0.35) on the first diffusion barrier layer, a second diffusion barrier layer formed of In y Ga (1-y) N (0≦y≦0.01) on the quantum well layer, and doped with an anti-defect agent including at least one of an N element and a Si element, and a second barrier layer formed of In x Ga (1-x) N (0.01≦x≦0.05) on the second diffusion barrier layer. The nitride-based semiconductor light emitting device may include an n-type semiconductor layer, the active layer, and a p-type semiconductor layer that are sequentially stacked on a substrate. |