| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
| filingDate |
2013-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7afb3845d1fae55237927b54682d4130
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee9eee685c7ee3a7cefcdc4a8726c207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40acb472e2efe6b3dca74b3ce26da99b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c84c3af4a76dcf91f1a7f84944658444 |
| publicationDate |
2014-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8866127-B2 |
| titleOfInvention |
Nitride semiconductor light-emitting element including Si-doped layer, and light source |
| abstract |
A nitride semiconductor light-emitting element uses a non-polar plane as its growing plane. A GaN/InGaN multi-quantum well active layer includes an Si-doped layer which is arranged in an In y Ga 1-y N (where 0<y<1) well layer, between the In y Ga 1-y N (where 0<y<1) well layer and a GaN barrier layer, or in a region of the GaN barrier layer that is located closer to the In y Ga 1-y N (where 0<y<1) well layer. A concentration of Si at one interface of the GaN barrier layer on a growing direction side is either zero or lower than a concentration of Si in the Si-doped layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9978908-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020321440-A1 |
| priorityDate |
2012-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |