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publicationNumber US-2007037396-A1
titleOfInvention Semiconductor processing using energized hydrogen gas and in combination with wet cleaning
abstract A method of fabricating a semiconductor device. The method comprises subjecting a substrate having formed thereon photoresist layer to a plasma hydrogen, the substrate further having formed thereon a sacrificial layer; contacting the photoresist layer with a photoresist removal solution; subjecting the sacrificial layer to a plasma hydrogen; and contacting the sacrificial material layer with an etchant solution.
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