| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-377
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0387 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2005-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c4b336289451f8e5d3ca2a535cbc5ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c2561ece7f235c60e2710919b8024d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d29dd8d509109d94202ec8ded0ca344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a49186cf38be353e57211c4c496fcd69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2dfe091f15767740b87ae0a9b2db3c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_697ccdf38f480d537d35a574b69b5a69 |
| publicationDate |
2006-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006079068-A1 |
| titleOfInvention |
Narrow width effect improvement with photoresist plug process and STI corner ion implantation |
| abstract |
A method to reduce the inverse narrow width effect in NMOS transistors is described. An oxide liner is deposited in a shallow trench that is formed to isolate active areas in a substrate. A photoresist plug is formed in the shallow trench and is recessed below the top of the substrate to expose the top portion of the oxide liner. An angled indium implant through the oxide liner into the substrate is then performed. The plug is removed and an insulator is deposited to fill the trenches. After planarization and wet etch steps, formation of a gate dielectric layer and a patterned gate layer, the NMOS transistor exhibits an improved Vt roll-off of 40 to 45 mVolts for both long and short channels. The improvement is achieved with no degradation in junction or isolation performance. The indium implant dose and angle may be varied to provide flexibility to the process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010038728-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007145495-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11295984-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003020106-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101894788-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010041199-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007238260-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008210992-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7294903-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005285163-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005285201-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102204302-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108122974-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069774-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006223263-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011073947-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8129816-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8030157-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008315325-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8125037-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7563690-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8207581-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022045168-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8350343-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7838353-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10535750-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7253047-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021313422-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8669620-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104112695-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7659179-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8513743-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013032899-A1 |
| priorityDate |
2003-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |