| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1041 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2005-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_713dd1f931c04254aeb893772d67ae53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b78b0140a25980a4d1a4b8b10efca63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cfef30a5201d4a409cc5de5d1025a82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31f8479d591d346305d6afee840dcbe2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7db0fc990aaabde083489e1b044f6b3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fcfbfdf924f263fd897620023c60b62 |
| publicationDate |
2007-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2007145495-A1 |
| titleOfInvention |
Method of fabricating a MOSFET transistor having an anti-halo for modifying narrow width device performance |
| abstract |
A method including forming a transistor structure structure comprising a gate electrode over an active region of a substrate, the active region defined by a trench isolation structure and changing a performance of a narrow width transistor with respect to a wide width transistor by introducing a dopant into the active region adjacent an interface defined by the trench isolation structure and the gate electrode. A structure including a gate electrode formed on a substrate, an active region adjacent an interface defined by a trench isolation structure and a gate electrode and an implant within the active region to change a performance of a transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8951874-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8431465-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2159835-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006240627-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10008597-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101338575-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9287261-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011316094-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8877596-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011204451-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011176115-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010052019-A1 |
| priorityDate |
2005-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |