| abstract |
A semiconductor device includes a semiconductor substrate, and an oxide layer formed thereon. The oxide layer has a window which is formed by forming a peeling-prevention layer on the oxide layer, forming a KrF-ray sensitive photoresist layer on the peeling-prevention layer, forming an opening in the KrF-ray sensitive photoresist layer, performing an anisotropic etching process by using the KrF-ray sensitive photoresist layer as a mask, so that an opening and a recess are respectively formed in the peeling-prevention layer and the oxide layer, and performing a wet etching process by using the peeling-prevention layer as a mask, resulting in formation of the recess of the oxide layer as the window in the oxide layer, whereby a surface area of the semiconductor substrate is exposed by the window. |