http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005170563-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 |
| filingDate | 2004-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98141b63e44e1316d645346e15885e22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae8e16ac91d685cf977376cc96537592 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d689a960ff69c30b8d7df25b7c21aebf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c2b77d7e34b9c506e361c7a508d7598 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86b2538e2dfeed68c55bf43cfdf3b2c1 |
| publicationDate | 2005-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2005170563-A1 |
| titleOfInvention | Method for end point detection of polysilicon chemical mechanical polishing in an anti-fuse memory device |
| abstract | A new method to polish down conductive lines in the manufacture of an integrated circuit device is achieved. The method comprises providing a plurality of conductive lines overlying a substrate. A high density plasma (HDP) oxide layer is deposited overlying the substrate and the conductive lines. In the regions between the conductive lines, first planar surfaces of the HDP oxide layer are formed below the top of the conductive lines. The HDP oxide layer is sputtered down overlying the conductive lines such that second planar surfaces of the HDP oxide layer are formed above the conductive lines. A polish stopping layer is deposited overlying the HDP oxide layer. A film layer is deposited overlying the polish stopping layer. The film layer is polished down to the polish stopping layer overlying the second planar top surfaces. The film layer, the polish stopping layer, and the conductive lines are polished down to the polish stopping layer overlying the first planar top surfaces to complete the polishing down of the conductive lines. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7799491-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008204580-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007238034-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006071298-A1 |
| priorityDate | 2004-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.