| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525 |
| filingDate |
2004-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7837f0a1f84b64f6439a6cd9e782c390
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37e83d7045c62c3a61b8448cf4d8b701 |
| publicationDate |
2004-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004227260-A1 |
| titleOfInvention |
Semiconductor device using fuse/anti-fuse system and method of manufacturing the same |
| abstract |
A first concave portion for the element isolation, a second concave portion for an aligning mark, and a third concave portion for an anti-fuse portion are formed simultaneously within a silicon substrate. After a silicon oxide film is formed on the entire surface, the silicon oxide film positioned within the second and third concave portions is removed. Then, a gate insulating film is formed on the entire surface, followed by forming a polysilicon film on the gate insulating film. Further, these polysilicon film and gate insulating film are selectively removed to form a gate electrode above an element region, an aligning mark portion in the second concave portion, and a gate electrode for an anti-fuse portion on the bottom surface of the third concave portion. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8466569-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020043936-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015171094-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009243123-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10186515-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10886283-B2 |
| priorityDate |
2000-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |