| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5252 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525 |
| filingDate |
2001-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab0f8c9539365273fb2327c2f23943e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7b147b73cf01851afaeb8692c9fab46 |
| publicationDate |
2001-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2001055839-A1 |
| titleOfInvention |
Method of fabricating a dielectric antifuse structure |
| abstract |
A dielectric antifuse structure is fabricated in an integrated circuit. The antifuse structure is incorporated in a contact hole in an oxide layer and has a dielectric layer arranged between a first conductive layer and a second conductive layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004227260-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006281210-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6774439-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7615813-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019177930-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008012057-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I717685-B |
| priorityDate |
2000-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |