http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004033371-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-21
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-21
filingDate 2003-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ecb6b2c50cae5cc382e8833f093405b
publicationDate 2004-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2004033371-A1
titleOfInvention Deposition of organosilsesquioxane films
abstract There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [R—SiO 1.5 ] x [H—SiO 1.5 ] y , wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C 1 to C 100 alkyl group. Also provided are films made from these precursors and objects comprising these films.
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priorityDate 2002-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 60.