http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004033371-A1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-21 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-21 |
filingDate | 2003-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ecb6b2c50cae5cc382e8833f093405b |
publicationDate | 2004-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2004033371-A1 |
titleOfInvention | Deposition of organosilsesquioxane films |
abstract | There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [R—SiO 1.5 ] x [H—SiO 1.5 ] y , wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C 1 to C 100 alkyl group. Also provided are films made from these precursors and objects comprising these films. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7910290-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008227028-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009011377-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7399581-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7901868-B2 |
priorityDate | 2002-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.