http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003129831-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 |
| filingDate | 2002-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f163f5987ea55d5bac150e24f829323a |
| publicationDate | 2003-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2003129831-A1 |
| titleOfInvention | Asymmetric, double-sided self-aligned silicide and method of forming the same |
| abstract | Disclosed are structures and processes which are related to asymmetric, self-aligned silicidation in the fabrication of integrated circuits. A pre-anneal contact stack includes a silicon substrate, a metal source layer such as titanium-rich titanium nitride (TiN x ), and a silicon layer. The metal nitride layer is deposited on the substrate by sputtering a target metal reactively in nitrogen and argon ambient. A N:Ar ratio is selected to deposit a uniform distribution of the metal nitride in an unsaturated mode (x<1) over the silicon substrate. The intermediate substrate structure is sintered to form a metal silicide. The silicidation of metal asymmetrically consumes less of the underlying silicon than the overlying silicon layer. The resulting structure is a mixed metal silicide/nitride layer which has a sufficient thickness to provide low sheet resistance without excessively consuming the underlying substrate. A metal nitride of maximum bulk resistivity within the unsaturated (metal-rich) realm is chosen for maximizing asymmetry in the silicidation. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112864240-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020119152-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11049813-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007178405-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I462228-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101900202-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11682625-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9721896-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483208-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8871421-B2 |
| priorityDate | 1998-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID129086521 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID335 |
Total number of triples: 23.