http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003032258-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76235 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2002-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe192414435912e5f244418441fc15b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59637b35e4eaff22d062490678396043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f50e2cb544d58a3be3e961fcbe8e0113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c71d41975d14a0ef2c3fd237f9cde8e9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02f9733bc5bd8cf5ceee009d4be64c6d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebf50bcbdb2c051d45cf6383f9bae116 |
| publicationDate | 2003-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2003032258-A1 |
| titleOfInvention | Isolation region forming methods |
| abstract | In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions. n In another aspect, the invention includes an isolation region forming method comprising: a) forming a silicon nitride layer over a substrate; b) forming a masking layer over the silicon nitride layer; c) forming a pattern of openings extending through the masking layer to the silicon nitride layer; d) extending the openings through the silicon nitride layer to the underlying substrate, the silicon nitride layer having edge regions proximate the openings and having a central region between the edge regions; e) extending the openings into the underlying substrate; f) after extending the openings into the underlying substrate, reducing a thickness of the silicon nitride layer at the edge regions to thin the edge regions relative to the central region; and g) forming oxide within the openings. |
| priorityDate | 1998-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.