| abstract |
The present invention provides a system and method for depositing materials onto a substrate and preferably includes physical vapor deposition (PVD) and chemical vapor deposition (CVD) processing. In one aspect, a system is provided that deposits a stack of layers on a substrate comprising one or more nucleation layers, one or more conductive layers compatible with a high-dielectric-constant (HDC) material and one or more HDC layers in various sequences. The HDC material is useful in depositing thin metal-oxide films and ferroelectric films, as well as other films requiring vaporization of precursor liquids. The system allows PVD and CVD to occur within a centralized system to avoid contamination and reduce processing time. Further, different CVD layers can be deposited within the same CVD chamber. In one embodiment, multiple sets of vaporized gas passages and other gas passages can be formed through a gas manifold to allow mixing of multiple precursors near the endpoint of the flow path for control of the mixing regimes. The layer can be annealed to promote better adhesion and surface texture between adjoining layers. |