| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3321 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2020-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d269bc175b433fa34c0182f913cbba03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc4c5751446f3200eb5aaf7a0e116635
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84266a739c2f80fd799e082f9cdcb1af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d420e2bd43df78ad156bcc488744d199
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a377257968a2bb8d2c6d6f3aa13ca38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d05b40e93bad3ac9005b43901c48c56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fc91ffd493f9d1af609ac8c2f7c2d0e |
| publicationDate |
2022-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11502160-B2 |
| titleOfInvention |
Method and system for forming metal-insulator-metal capacitors |
| abstract |
A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe. |
| priorityDate |
2020-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |