http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11226549-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-84 |
| filingDate | 2016-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e34c21a8861c45dbe7c96760158af6a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d104fd2245bdf5654068f4517465a2f7 |
| publicationDate | 2022-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-11226549-B2 |
| titleOfInvention | Mask blank, phase shift mask, method for manufacturing thereof, and method for manufacturing semiconductor device |
| abstract | Provided is a mask blank for a phase shift mask having an etching stopper film, which satisfies the characteristics: higher durability to dry etching with fluorine-based gas that is used during the shift pattern formation as compared to that of a transparent substrate; high resistance to chemical cleaning; and high transmittance of exposure light.The mask blank includes a light shielding film on a main surface of a transparent substrate, having a structure where an etching stopper film, a phase shift film, and a light shielding film are laminated in this order on the transparent substrate; wherein the phase shift film includes a material containing silicon and oxygen; and the etching stopper film includes a material containing silicon, aluminum, and oxygen. |
| priorityDate | 2015-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 68.