http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7771894-B2

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31616
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filingDate 2006-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd30986b9329d9030c95dea96687e49b
publicationDate 2010-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7771894-B2
titleOfInvention Photomask having self-masking layer and methods of etching same
abstract A photomask structure and method of etching is provided herein. In one embodiment, a photomask includes a translucent substrate and an opaque multi-layer absorber layer disposed over the substrate. The opaque multi-layer absorber layer comprises a self-mask layer disposed over a bulk absorber layer. The self-mask layer comprises one of nitrogenized tantalum and silicon-based materials (TaSiON), tantalum boron oxide-based materials (TaBO), or oxidized and nitrogenized tantalum-based materials (TaON). The bulk absorber layer comprises on of tantalum silicide-based materials (TaSi), nitrogenized tantalum boride-based materials (TaBN), or tantalum nitride-based materials (TaN). The self-mask layer has a low etch rate during the bulk absorber layer etch step, thereby acting as a hard mask.
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