| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4991
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2019-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ff5fdd76cb14e20e49589d29bc268ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d05f1f86d9fa7250567755f12c7d0d53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b90232432b1b2a1f0cdb01aa84d55af9 |
| publicationDate |
2021-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10896845-B2 |
| titleOfInvention |
Airgap vertical transistor without structural collapse |
| abstract |
Embodiments of the present invention are directed to forming an airgap-based vertical field effect transistor (VFET) without structural collapse. A dielectric collar anchors the structure while forming the airgaps. In a non-limiting embodiment of the invention, a vertical transistor is formed over a substrate. The vertical transistor can include a fin, a top spacer, a top source/drain (S/D) on the fin, and a contact on the top S/D. A dielectric layer is recessed below a top surface of the top spacer and a dielectric collar is formed on the recessed surface of the dielectric layer. Portions of the dielectric layer are removed to form a first cavity and a second cavity. A first airgap is formed in the first cavity and a second airgap is formed in the second cavity. The dielectric collar anchors the top S/D to the top spacer while forming the first airgap and the second airgap. |
| priorityDate |
2019-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |