Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate |
2019-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_596983d05c56b053922c48193402d588 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc253be45b5b6d827030131b8cac783b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9655c7b152f92a19d7b7f24be3b681b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9ebf2a34e42c2aea6c737565627d10e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b27f061ca5477550bbe6bec986cf2b6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3ad19474b95e07a88f2776aee05a580 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80ab3724ce91167757fe54bac39c37c5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6d029110dc964ac4235ecc8b0aa60b6 |
publicationDate |
2020-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10861708-B2 |
titleOfInvention |
Three or more states for achieving high aspect ratio dielectric etch |
abstract |
Systems and methods for applying three or more states for achieving a high aspect ratio dielectric etch operation are described. In one of the methods, a middle state is introduced between a high state and a low state. The middle state is applied to both a source radio frequency (RF) generator and a bias radio frequency (RF) generator. During the middle state, RF power is maintained to be between a high amount of RF power associated with the high state and a low amount of RF power associated with the low state to achieve the high aspect ratio dielectric etch. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11335539-B2 |
priorityDate |
2018-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |