| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K5-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K5-092 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04 |
| filingDate |
2013-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97443f8ad106af852b084bfe4d89daf3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d338fa9da212910df6f0916095817b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ace0854343ed3077799e5f0d633b11a0 |
| publicationDate |
2020-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10613440-B2 |
| titleOfInvention |
Silicon-containing EUV resist underlayer film-forming composition containing onium sulfonate |
| abstract |
A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1):n nR 1 a Si(R 2 ) 4-a Formula (1)n nand compounds of Formula (2):n n R 3 c Si(R 4 ) 3-c 2 Y b Formula (2)n na hydrolyzed product thereof, or a hydrolyzed condensate thereof. A method for manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; a resist underlayer film by applying the resist underlayer film-forming composition onto the organic underlayer film, then baking applied resist underlayer film-forming composition; forming a resist film by applying composition for EUV resists onto resist underlayer film; EUV-exposing the resist film; and obtaining a resist pattern by developing exposed resist film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11604414-B2 |
| priorityDate |
2012-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |