| abstract |
Provided is a composition for the bottom layer of a resist, including an organic-silane-based polycondensation compound and a solvent, wherein the organic-silane-based polycondensation compound contains from 40 to 80 mol % of a structural unit as expressed in chemical formula 1. Therefore, the present invention relates to a composition for the bottom layer of a resist enabling excellent pattern transferability, using a bottom layer of a resist having excellent storage stability and etch resistance, and to a method using same to manufacture a semiconductor integrated circuit device. |