Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2018-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a0d4d27d1a2b59ae262b4bb505d8f08 |
publicationDate |
2019-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10367061-B1 |
titleOfInvention |
Replacement metal gate and inner spacer formation in three dimensional structures using sacrificial silicon germanium |
abstract |
A technique relates to a semiconductor device. Stacks are formed each of which including two or more nanosheets separated by a high-k dielectric material. The high-k dielectric material is formed on at least a center portion of the two or more nanosheets in the stacks. A lower spacer material is on a periphery of the two or more nanosheets, and an upper spacer material is on the lower spacer material such that the upper spacer material is above a top one of the two or more nano sheets. Source and drain regions are formed on sides of the stacks. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10964798-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019341469-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10832916-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11581421-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021313452-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020066879-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11043577-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10636893-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11594615-B2 |
priorityDate |
2018-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |