| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5b57e43d2ae021e971426b2bcdf2cd48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e164afd50d1c9941ab64b2ea44747aeb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af687fe044ae3a57bd114c92fc1ec3b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bccde8faf102dc15841e2b65cb63ba0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_888f52db110dbefacc4cee8f378e36ae |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0555
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-977
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00012
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05599
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05644
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05571
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-486 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2012-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52047b49312c21c54aacf5296b851eab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd57880551640d6342406cba482d7fb5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b52564a96aa7135fea420fdeb534a21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c542b4c627205758b564e64cb8e7c728 |
| publicationDate |
2019-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10192801-B2 |
| titleOfInvention |
Semiconductor device and method of forming vertical interconnect structure in substrate for IPD and baseband circuit separated by high-resistivity molding compound |
| abstract |
A semiconductor device is made with a conductive via formed through a top-side of the substrate. The conductive via extends vertically through less than a thickness of the substrate. An integrated passive device (IPD) is formed over the substrate. A plurality of first conductive pillars is formed over the first IPD. A first semiconductor die is mounted over the substrate. An encapsulant is formed around the first conductive pillars and first semiconductor die. A second IPD is formed over the encapsulant. An interconnect structure is formed over the second IPD. The interconnect structure operates as a heat sink. A portion of a back-side of the substrate is removed to expose the first conductive via. A second semiconductor die is mounted to the back-side of the substrate. The second semiconductor die is electrically connected to the first IPD and first semiconductor die through the conductive via. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10884955-B2 |
| priorityDate |
2008-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |