| abstract |
A semiconductor device is made by providing a sacrificial substrate, forming a first insulating layer over the sacrificial substrate, forming a first passivation layer over the first insulating layer, forming a second insulating layer over the first passivation layer, forming an integrated passive device over the second insulating layer, forming a wafer support structure over the integrated passive device, removing the sacrificial substrate to expose the first insulating layer after forming the wafer support structure, and forming an interconnect structure over the first insulating layer in electrical contact with the integrated passive device. The integrated passive device includes an inductor, capacitor, or resistor. The sacrificial substrate is removed by mechanical grinding and wet etching. The wafer support structure can be glass, ceramic, silicon, or molding compound. The interconnect structure can include a solder bump, wire bond, and intermediate conduction layer formed on a backside of the semiconductor device. |