Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-515 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-38 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2017-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b9691c217e0b6ce6d33cd11c1dda176 |
publicationDate |
2018-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10043669-B2 |
titleOfInvention |
Method for fabricating metal gate structure |
abstract |
A method for fabricating a metal gate structure includes following steps. A substrate is provided and followed by forming a high-K dielectric layer on the substrate. Then, an oxygen-containing titanium nitride layer is formed on the high-K dielectric layer. Next, an amorphous silicon layer is formed on the oxygen-containing titanium nitride layer and followed by performing an annealing process to drive oxygen in the oxygen-containing titanium nitride layer to the high-K dielectric layer. |
priorityDate |
2017-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |